SI1032X-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Turn On Delay Time :

50 ns

Height :

800μm

Rds On Max :

5 Ω

Rise Time :

25ns

Rds On (Max) @ Id, Vgs :

5Ohm @ 200mA, 4.5V

Turn-Off Delay Time :

50 ns

REACH SVHC :

Unknown

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

SC-89-3

Power Dissipation :

340mW

Max Operating Temperature :

150°C

Fall Time (Typ) :

25 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V

Number of Channels :

1

Package / Case :

SC-89, SOT-490

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Mount :

Surface Mount

Resistance :

5Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

20V

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Nominal Vgs :

700 mV

Power Dissipation-Max :

300mW Ta

Weight :

29.993795mg

Length :

1.7mm

Vgs (Max) :

±6V

Published :

2008

Mounting Type :

Surface Mount

Number of Pins :

3

Element Configuration :

Single

Continuous Drain Current (ID) :

200mA

Series :

TrenchFET®

Width :

950μm

Gate to Source Voltage (Vgs) :

6V

Drain to Source Resistance :

5Ohm

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

FET Type :

N-Channel