SI1025X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

14 Weeks

Width :

1.2mm

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

1.7nC @ 15V

Additional Feature :

LOW THRESHOLD

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

23pF @ 25V

Series :

TrenchFET®

Height :

600μm

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Dual

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain Current-Max (Abs) (ID) :

0.19A

Package / Case :

SOT-563, SOT-666

Rds On (Max) @ Id, Vgs :

4 Ω @ 500mA, 10V

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

-500mA

Mounting Type :

Surface Mount

Length :

1.7mm

Published :

2016

REACH SVHC :

Unknown

Current - Continuous Drain (Id) @ 25°C :

190mA

Pin Count :

3

Power Dissipation :

250mW

Number of Terminations :

6

Resistance :

4Ohm

Packaging :

Tape and Reel (TR)

Base Part Number :

SI1025

Max Power Dissipation :

250mW

Weight :

32.006612mg

Threshold Voltage :

-2V

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Number of Elements :

2

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-60V

Number of Pins :

6

FET Type :

2 P-Channel (Dual)

Lead Free :

Lead Free

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING