SI1024X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Base Part Number :

SI1024

Number of Terminations :

6

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

900mV @ 250μA

Drain Current-Max (Abs) (ID) :

0.485A

Factory Lead Time :

14 Weeks

FET Type :

2 N-Channel (Dual)

Resistance :

700mOhm

Additional Feature :

LOW THRESHOLD

Weight :

8.193012mg

Continuous Drain Current (ID) :

600mA

Gate to Source Voltage (Vgs) :

6V

Rds On (Max) @ Id, Vgs :

700m Ω @ 600mA, 4.5V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

250mW

Height :

600μm

Pin Count :

6

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Width :

1.2mm

Threshold Voltage :

450mV

Number of Pins :

6

Transistor Element Material :

SILICON

Series :

TrenchFET®

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Lead Free :

Lead Free

ECCN Code :

EAR99

Power Dissipation :

250mW

Current - Continuous Drain (Id) @ 25°C :

485mA

REACH SVHC :

Unknown

Radiation Hardening :

No

Terminal Form :

Flat

Length :

1.7mm

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V

Package / Case :

SOT-563, SOT-666

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

20V

Mounting Type :

Surface Mount