SH8MA3TB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G8

FET Feature :

Standard

Pulsed Drain Current-Max (IDM) :

18A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

28m Ω @ 7A, 10V, 50m Ω @ 6A, 10V

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

300pF 480pF @ 15V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

1.7 mJ

Number of Elements :

2

FET Type :

N and P-Channel

DS Breakdown Voltage-Min :

30V

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Drain-source On Resistance-Max :

0.057Ohm

Power - Max :

2W Ta

Packaging :

Cut Tape (CT)

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

7.2nC, 10nC @ 10V

Number of Terminations :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

7A Ta 6A Ta