S29GL512N11FFI023

Manufacturer :

Infineon Technologies

Product Category :

Memory

Write Cycle Time - Word, Page :

110ns

Operating Mode :

ASYNCHRONOUS

Organization :

32MX16

Height Seated (Max) :

1.4mm

Access Time (Max) :

110 ns

Factory Lead Time :

18 Weeks

Mounting Type :

Surface Mount

Voltage - Supply :

2.7V~3.6V

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

JESD-30 Code :

R-PBGA-B64

Memory Size :

512Mb 64M x 8 32M x 16

Memory Width :

16

Number of Terminations :

64

Series :

GL-N

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supply Voltage :

3V

Surface Mount :

yes

Programming Voltage :

3V

Width :

11mm

Operating Temperature :

-40°C~85°C TA

RoHS Status :

ROHS3 Compliant

Package / Case :

64-LBGA

Length :

13mm

Supply Voltage-Min (Vsup) :

2.7V

Terminal Pitch :

1mm

Memory Density :

536870912 bit

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Type :

Non-Volatile

JESD-609 Code :

e1

Supply Voltage-Max (Vsup) :

3.6V

Number of Functions :

1

Alternate Memory Width :

8

Memory Format :

Flash

Terminal Position :

BOTTOM

Memory Interface :

Parallel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)