R6035KNZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

ECCN Code :

EAR99

Number of Terminations :

3

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

35A

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

600V

Published :

2017

Drain-source On Resistance-Max :

0.102Ohm

Surface Mount :

No

Factory Lead Time :

15 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 1mA

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-3P-3 Full Pack

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

105A

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

102m Ω @ 18.1A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

Avalanche Energy Rating (Eas) :

796 mJ

Operating Temperature :

-55°C~150°C TJ

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Terminal Position :

Single

Power Dissipation-Max :

102W Tc

Drain to Source Voltage (Vdss) :

600V