R6024ENX
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- Mfr.Part #
- R6024ENX
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 24A TO220FM
- Stock
- 4,274
- In Stock ：
- 4,274
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 11.3A, 10V
- Drain-source On Resistance-Max :
- 0.165Ohm
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 497 mJ
- DS Breakdown Voltage-Min :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 72A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Bulk
- Drain to Source Voltage (Vdss) :
- 600V
- Package / Case :
- TO-220-3 Full Pack
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 40W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Reach Compliance Code :
- not_compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1650pF @ 25V
- Case Connection :
- Isolated
- Published :
- 2014
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 24A
- Mounting Type :
- Through Hole
- Threshold Voltage :
- 4V
- Factory Lead Time :
- 18 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Datasheets
- R6024ENX
N-Channel Bulk 165m Ω @ 11.3A, 10V ±20V 1650pF @ 25V 70nC @ 10V 600V TO-220-3 Full Pack
R6024ENX Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 497 mJ.A device's maximum input capacitance is 1650pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 72A, which is also its maximum rating peak drainage current.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.For normal operation, maintain the DS breakdown voltage above 600V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
R6024ENX Features
the avalanche energy rating (Eas) is 497 mJ
a continuous drain current (ID) of 24A
based on its rated peak drain current 72A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
R6024ENX Applications
There are a lot of ROHM Semiconductor
R6024ENX applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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