R6020KNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

60A

Vgs(th) (Max) @ Id :

5V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

600V

Rds On (Max) @ Id, Vgs :

196m Ω @ 9.5A, 10V

Vgs (Max) :

±20V

Power Dissipation-Max :

231W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Drain Current-Max (Abs) (ID) :

20A

Input Capacitance (Ciss) (Max) @ Vds :

1550pF @ 25V

Number of Elements :

1

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Published :

2017

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

418 mJ

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.196Ohm

DS Breakdown Voltage-Min :

600V

Case Connection :

DRAIN

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

20 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED