R6012ANX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

30 ns

Width :

4.8mm

Pin Count :

3

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Power Dissipation-Max :

50W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

0.265 mJ

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Drain to Source Breakdown Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Turn-Off Delay Time :

90 ns

Radiation Hardening :

No

Published :

2012

Package / Case :

TO-220-3 Full Pack

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

35 ns

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

420m Ω @ 6A, 10V

Time@Peak Reflow Temperature-Max (s) :

10

Factory Lead Time :

17 Weeks

Rise Time :

30ns

Vgs (Max) :

±30V

Packaging :

Bulk

Mount :

Through Hole

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

12A

Length :

10.3mm

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

8A

FET Type :

N-Channel

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

2A

Operating Temperature :

150°C TJ

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Pbfree Code :

yes

Height :

15.4mm

Power Dissipation :

50W