R6007ENX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

600V

Vgs(th) (Max) @ Id :

4V @ 1mA

Case Connection :

Isolated

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Drain-source On Resistance-Max :

0.62Ohm

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

14A

Published :

2013

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Number of Pins :

3

Packaging :

Bulk

Terminal Position :

Single

Continuous Drain Current (ID) :

7A

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

7A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

620m Ω @ 2.4A, 10V

Number of Terminations :

3

Factory Lead Time :

18 Weeks

Operating Temperature :

150°C TJ

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3 Full Pack

Input Capacitance (Ciss) (Max) @ Vds :

390pF @ 25V

Threshold Voltage :

4V

Power Dissipation-Max :

40W Tc