R5207ANDTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

525V

Transistor Element Material :

SILICON

Width :

5.5mm

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Finish :

Tin/Copper (Sn98Cu2)

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Height :

2.3mm

Turn On Delay Time :

20 ns

Pulsed Drain Current-Max (IDM) :

28A

Continuous Drain Current (ID) :

7A

Factory Lead Time :

20 Weeks

Current - Continuous Drain (Id) @ 25°C :

7A Ta

RoHS Status :

ROHS3 Compliant

Length :

6.5mm

Element Configuration :

Single

JESD-609 Code :

e2

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Radiation Hardening :

No

Rise Time :

22ns

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Number of Pins :

3

Drain-source On Resistance-Max :

1Ohm

Turn-Off Delay Time :

50 ns

Number of Terminations :

2

Published :

2011

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Fall Time (Typ) :

25 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

525V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

7A

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Vgs (Max) :

±30V

Terminal Form :

Gull wing

Power Dissipation-Max :

40W Tc

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.5A, 10V