R5016FNX
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- Mfr.Part #
- R5016FNX
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO220FM
- Stock
- 21,092
- In Stock ：
- 21,092
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 10 Weeks
- Packaging :
- Bulk
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 500V
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 500V
- Avalanche Energy Rating (Eas) :
- 17.1 mJ
- Continuous Drain Current (ID) :
- 16A
- Package / Case :
- TO-220-3 Full Pack
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 110 ns
- Rds On (Max) @ Id, Vgs :
- 325m Ω @ 8A, 10V
- Mount :
- Through Hole
- Rise Time :
- 60ns
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2011
- Turn On Delay Time :
- 35 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta
- Pulsed Drain Current-Max (IDM) :
- 64A
- Fall Time (Typ) :
- 35 ns
- Power Dissipation-Max :
- 50W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Datasheets
- R5016FNX
N-Channel Bulk 325m Ω @ 8A, 10V ±30V 1700pF @ 25V 46nC @ 10V 500V TO-220-3 Full Pack
R5016FNX Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 17.1 mJ.A device's maximum input capacitance is 1700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 110 ns.Its maximum pulsed drain current is 64A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
R5016FNX Features
the avalanche energy rating (Eas) is 17.1 mJ
a continuous drain current (ID) of 16A
the turn-off delay time is 110 ns
based on its rated peak drain current 64A.
a 500V drain to source voltage (Vdss)
R5016FNX Applications
There are a lot of ROHM Semiconductor
R5016FNX applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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