R5011ANX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

8.1 mJ

Power Dissipation-Max :

50W Tc

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Factory Lead Time :

17 Weeks

Pbfree Code :

yes

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Drain to Source Voltage (Vdss) :

500V

Drain-source On Resistance-Max :

0.5Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3 Full Pack

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Transistor Application :

SWITCHING

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Number of Terminations :

3

Continuous Drain Current (ID) :

11A

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

500V

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

44A

Published :

2008

Packaging :

Bulk

Mount :

Through Hole

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Operating Temperature :

150°C TJ

Number of Elements :

1

Qualification Status :

Not Qualified

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

500m Ω @ 5.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant