R5007FNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

7A

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Factory Lead Time :

10 Weeks

Power Dissipation-Max :

40W Tc

Transistor Application :

SWITCHING

Case Connection :

Isolated

Terminal Position :

Single

Package / Case :

TO-220-3 Full Pack

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

500V

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

7A Tc

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

3.2 mJ

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

500V

Operating Temperature :

150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

28A

Rds On (Max) @ Id, Vgs :

1.3 Ω @ 3.5A, 10V

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

7A

Packaging :

Bulk

Published :

2011

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

FET Type :

N-Channel

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)