PUMH4,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Number of Terminations :

6

Max Operating Temperature :

150°C

Min Operating Temperature :

-65°C

Polarity :

NPN

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Elements :

2

Transistor Application :

SWITCHING

Collector-Base Capacitance-Max :

3.5pF

Published :

2003

Peak Reflow Temperature (Cel) :

260

Zener Voltage :

12V

Pin Count :

6

Max Breakdown Voltage :

50V

Radiation Hardening :

No

Terminal Form :

Gull wing

Resistor - Base (R1) :

10k Ω

Weight :

4.535924g

Current - Collector Cutoff (Max) :

1μA

VCEsat-Max :

0.3 V

Number of Pins :

6

Factory Lead Time :

4 Weeks

Transistor Type :

2 NPN - Pre-Biased (Dual)

Height :

6.35mm

Additional Feature :

BUILT-IN BIAS RESISTOR

Collector Emitter Voltage (VCEO) :

50V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Base Part Number :

P*MH4

Length :

6.35mm

Width :

6.35mm

ECCN Code :

EAR99

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Max Output Current :

100A

Max Power Dissipation :

300mW

Mounting Type :

Surface Mount

HTS Code :

8541.21.00.95

Operating Supply Voltage :

50V

Lead Free :

Lead Free