PSMN6R1-25MLDX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Reference Standard :

IEC-60134

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

60A

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.2V @ 1mA

Published :

2016

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-1210, 8-LFPAK33

Drain to Source Voltage (Vdss) :

25V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

25V

Case Connection :

DRAIN

Factory Lead Time :

26 Weeks

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

10.7nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

7.24m Ω @ 15A, 10V

Vgs (Max) :

±20V

Additional Feature :

High Reliability

Number of Elements :

1

JESD-30 Code :

R-PSSO-G4

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0103Ohm

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

235A

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

Transistor Element Material :

SILICON

FET Feature :

Schottky Diode (Body)

Avalanche Energy Rating (Eas) :

51.3 mJ

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

42W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

702pF @ 12V