PSMN0R9-25YLC,115

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Mfr.Part #
PSMN0R9-25YLC,115
Manufacturer
Nexperia
Package / Case
SC-100, SOT-669
Datasheet
Download
Description
MOSFET N-CH 25V 100A LFPAK56
Stock
72,009
In Stock :
72,009

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Manufacturer :
Nexperia
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~175°C TJ
Number of Elements :
1
Vgs(th) (Max) @ Id :
1.95V @ 1mA
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
SC-100, SOT-669
Pulsed Drain Current-Max (IDM) :
1563A
Input Capacitance (Ciss) (Max) @ Vds :
6775pF @ 12V
Case Connection :
DRAIN
HTS Code :
8541.29.00.75
Pin Count :
4
Published :
2011
Drain-source On Resistance-Max :
0.00125Ohm
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
25V
Additional Feature :
HIGH RELIABILITY, ULTRA-LOW RESISTANCE
JESD-30 Code :
R-PSSO-G4
Number of Terminations :
4
Rds On (Max) @ Id, Vgs :
0.99m Ω @ 25A, 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Type :
Surface Mount
Factory Lead Time :
12 Weeks
Packaging :
Tape and Reel (TR)
DS Breakdown Voltage-Min :
25V
Terminal Form :
Gull wing
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Avalanche Energy Rating (Eas) :
342 mJ
Vgs (Max) :
±20V
ECCN Code :
EAR99
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Power Dissipation-Max :
272W Tc
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Reach Compliance Code :
not_compliant
Time@Peak Reflow Temperature-Max (s) :
30
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Drain Current-Max (Abs) (ID) :
100A
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Surface Mount :
yes
Datasheets
PSMN0R9-25YLC,115
Introducing Transistors - FETs, MOSFETs - Single Nexperia PSMN0R9-25YLC,115 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:SC-100, SOT-669, Number of Terminations:4, Mounting Type:Surface Mount, PSMN0R9-25YLC,115 pinout, PSMN0R9-25YLC,115 datasheet PDF, PSMN0R9-25YLC,115 amp .Beyond Transistors - FETs, MOSFETs - Single Nexperia PSMN0R9-25YLC,115 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PSMN0R9-25YLC,115


N-Channel Tape & Reel (TR) 0.99m Ω @ 25A, 10V ±20V 6775pF @ 12V 110nC @ 10V 25V SC-100, SOT-669

PSMN0R9-25YLC,115 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 342 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6775pF @ 12V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 100A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 1563A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 25V in order to maintain normal operation.Operating this transistor requires a 25V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

PSMN0R9-25YLC,115 Features


the avalanche energy rating (Eas) is 342 mJ
based on its rated peak drain current 1563A.
a 25V drain to source voltage (Vdss)


PSMN0R9-25YLC,115 Applications


There are a lot of Nexperia USA Inc.
PSMN0R9-25YLC,115 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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