PSMN063-150D,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

HTS Code :

8541.29.00.75

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

150W Tc

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

116A

Published :

2009

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Drain Current-Max (Abs) (ID) :

29A

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2390pF @ 25V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Pin Count :

3

Drain to Source Voltage (Vdss) :

150V

Vgs(th) (Max) @ Id :

4V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Series :

TrenchMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Surface Mount :

yes

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

502 mJ

Factory Lead Time :

26 Weeks

Rds On (Max) @ Id, Vgs :

63m Ω @ 15A, 10V

DS Breakdown Voltage-Min :

150V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.063Ohm

Case Connection :

DRAIN

Terminal Position :

Single

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ