PSMN057-200P,127
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- Mfr.Part #
- PSMN057-200P,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 39A TO220AB
- Stock
- 4,340
- In Stock ：
- 4,340
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 39A Tc
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- 200V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3750pF @ 25V
- Continuous Drain Current (ID) :
- 39A
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-3
- HTS Code :
- 8541.29.00.75
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 250W Tc
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Max Dual Supply Voltage :
- 200V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Published :
- 2011
- Turn-Off Delay Time :
- 105 ns
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 78 ns
- Power Dissipation :
- 250W
- Series :
- TrenchMOS™
- JESD-609 Code :
- e3
- Rise Time :
- 58ns
- Factory Lead Time :
- 12 Weeks
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 57m Ω @ 17A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 10V
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 156A
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.057Ohm
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Turn On Delay Time :
- 18 ns
- Datasheets
- PSMN057-200P,127
N-Channel Tube 57m Ω @ 17A, 10V ±20V 3750pF @ 25V 96nC @ 10V TO-220-3
PSMN057-200P,127 Overview
A device's maximum input capacitance is 3750pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 39A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 105 ns.Its maximum pulsed drain current is 156A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 200V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
PSMN057-200P,127 Features
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 105 ns
based on its rated peak drain current 156A.
PSMN057-200P,127 Applications
There are a lot of Nexperia USA Inc.
PSMN057-200P,127 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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