PQMB11Z

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Package / Case :

6-XFDFN Exposed Pad

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistor - Emitter Base (R2) :

10k Ω

Frequency - Transition :

180MHz

JESD-30 Code :

R-PDSO-N6

Collector Emitter Voltage (VCEO) :

150mV

Terminal Form :

NO LEAD

Reference Standard :

AEC-Q101; IEC-60134

Current - Collector Cutoff (Max) :

1μA

Transition Frequency :

180MHz

Mounting Type :

Surface Mount

Series :

Automotive, AEC-Q101

Number of Elements :

2

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Resistor - Base (R1) :

10k Ω

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Power - Max :

230mW

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Collector Emitter Breakdown Voltage :

50V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

PNP

Transistor Application :

SWITCHING

Pin Count :

6

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Mount :

Surface Mount

Number of Terminations :

6

Max Collector Current :

100mA

Transistor Type :

2 PNP - Pre-Biased (Dual)

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

230mW