PMV60EN,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-30 Code :

R-PDSO-G3

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

55m Ω @ 2A, 10V

Drain Current-Max (Abs) (ID) :

4.7A

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

JESD-609 Code :

e3

Published :

1997

Vgs(th) (Max) @ Id :

2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 30V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JEDEC-95 Code :

TO-236AB

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Number of Elements :

1

Power Dissipation-Max :

280mW Tj

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Number of Terminations :

3

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.055Ohm

Current - Continuous Drain (Id) @ 25°C :

4.7A Tc

Series :

TrenchMOS™

HTS Code :

8541.29.00.75

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99