PMST4401,115
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- Mfr.Part #
- PMST4401,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT323
- Stock
- 8,234
- In Stock ：
- 8,234
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- VCEsat-Max :
- 0.75 V
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Frequency :
- 250MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 4 Weeks
- Collector-Base Capacitance-Max :
- 8pF
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Pins :
- 3
- Package / Case :
- SC-70, SOT-323
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 40V
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 40V
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 250MHz
- Power Dissipation :
- 200mW
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Dual
- Transition Frequency :
- 250MHz
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Collector Base Voltage (VCBO) :
- 60V
- Turn Off Time-Max (toff) :
- 255ns
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 40V
- Max Collector Current :
- 600mA
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Series :
- Automotive, AEC-Q101
- Element Configuration :
- Single
- Pin Count :
- 3
- Datasheets
- PMST4401,115
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST4401,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
PMST4401,115 Features
the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
PMST4401,115 Applications
There are a lot of Nexperia USA Inc.
PMST4401,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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