PMPB40SNA115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Mounting Type :

Surface Mount

Rise Time :

23ns

FET Type :

N-Channel

Continuous Drain Current (ID) :

12.9A

Vgs (Max) :

±20V

Turn On Delay Time :

9 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

12.9A Tc

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.7W

Rds On (Max) @ Id, Vgs :

43m Ω @ 4.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

612pF @ 30V

Gate to Source Voltage (Vgs) :

20V

Pin Count :

6

Number of Pins :

6

Turn-Off Delay Time :

12 ns

Package / Case :

6-UDFN Exposed Pad

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Max Dual Supply Voltage :

60V

Published :

2004