PDTA123EM,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Packaging :

Tape and Reel (TR)

Transistor Type :

PNP - Pre-Biased

Terminal Position :

BOTTOM

Collector Emitter Voltage (VCEO) :

50V

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

2.2 k Ω

Package / Case :

SC-101, SOT-883

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-65°C

Number of Elements :

1

Number of Pins :

3

Emitter Base Voltage (VEBO) :

-10V

Max Breakdown Voltage :

50V

Factory Lead Time :

8 Weeks

Resistor - Emitter Base (R2) :

2.2 k Ω

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Power Dissipation :

250mW

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

1μA

Mounting Type :

Surface Mount

Polarity :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Case Connection :

COLLECTOR

Terminal Finish :

Tin (Sn)

Pin Count :

3

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Base Part Number :

PDTA123

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Mount :

Surface Mount

Element Configuration :

Single

Lead Free :

Lead Free

Max Power Dissipation :

250mW

Published :

2009

JESD-609 Code :

e3

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V

hFE Min :

30