PBSS8110AS,126
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- Mfr.Part #
- PBSS8110AS,126
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A TO92-3
- Stock
- 36,172
- In Stock ：
- 36,172
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 250mA 10V
- Current - Collector (Ic) (Max) :
- 1A
- Published :
- 2009
- Frequency - Transition :
- 100MHz
- Power Dissipation-Max (Abs) :
- 0.83W
- Transistor Type :
- NPN
- Surface Mount :
- No
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Packaging :
- Tape and Box (TB)
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA
- Power - Max :
- 830mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 100MHz
- Datasheets
- PBSS8110AS,126
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
PBSS8110AS,126 Overview
In this device, the DC current gain is 150 @ 250mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 100mA, 1A.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 100V.
PBSS8110AS,126 Features
the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
a transition frequency of 100MHz
PBSS8110AS,126 Applications
There are a lot of NXP USA Inc.
PBSS8110AS,126 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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