PBLS4003V,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Operating Temperature (Max) :

150°C

Power Dissipation-Max (Abs) :

0.3W

Current - Collector Cutoff (Max) :

1μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector (Ic) (Max) :

100mA 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V / 150 @ 100mA. 2V

Number of Terminations :

6

Terminal Form :

Flat

Package / Case :

SOT-563, SOT-666

RoHS Status :

ROHS3 Compliant

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

Transition Frequency :

300MHz

Power - Max :

300mW

Number of Elements :

2

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-F6

Resistor - Base (R1) :

10k Ω

Base Part Number :

PBLS4003

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Terminal Position :

Dual

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

10k Ω

JESD-609 Code :

e3

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA

Polarity/Channel Type :

NPN AND PNP

Published :

2009

Frequency - Transition :

300MHz

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Transistor Type :

1 NPN Pre-Biased, 1 PNP