PBHV9050T,215
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- Mfr.Part #
- PBHV9050T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 500V 0.15A TO236AB
- Stock
- 52,381
- In Stock ：
- 52,381
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 50MHz
- Polarity/Channel Type :
- PNP
- Published :
- 2009
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA
- Max Collector Current :
- 150mA
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 50MHz
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- hFE Min :
- 80
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- -6V
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 10mA, 50mA
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 500V
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 500V
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 50MHz
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 500V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 300mW
- Mounting Type :
- Surface Mount
- Base Part Number :
- PBHV9050
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 50mA 10V
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Max Power Dissipation :
- 300mW
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Datasheets
- PBHV9050T,215
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBHV9050T,215 Overview
In this device, the DC current gain is 80 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 10mA, 50mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.50MHz is present in the transition frequency.An input voltage of 500V volts is the breakdown voltage.Maximum collector currents can be below 150mA volts.
PBHV9050T,215 Features
the DC current gain for this device is 80 @ 50mA 10V
the vce saturation(Max) is 200mV @ 10mA, 50mA
the emitter base voltage is kept at -6V
a transition frequency of 50MHz
PBHV9050T,215 Applications
There are a lot of Nexperia USA Inc.
PBHV9050T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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