NVR5124PLT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Pbfree Code :

yes

Turn-Off Delay Time :

12.2 ns

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Continuous Drain Current (ID) :

-1.1A

Turn On Delay Time :

6.6 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

4.3nC @ 10V

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

230m Ω @ 3A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Height :

1.11mm

Terminal Position :

Dual

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Series :

Automotive, AEC-Q101

Drain-source On Resistance-Max :

0.365Ohm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

-470mW

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Factory Lead Time :

11 Weeks

Number of Elements :

1

Published :

2016

Drain to Source Breakdown Voltage :

-60V

Power Dissipation-Max :

470mW Ta

Mounting Type :

Surface Mount

FET Type :

P-Channel

Max Junction Temperature (Tj) :

150°C

Number of Channels :

1

JESD-30 Code :

R-PDSO-G3

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON