NVMFS5885NLT1G

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Mfr.Part #
NVMFS5885NLT1G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 60V 10.2A 5DFN
Stock
5,044
In Stock :
5,044

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Reach Compliance Code :
not_compliant
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
5
Element Configuration :
Single
Drain to Source Breakdown Voltage :
60V
RoHS Status :
ROHS3 Compliant
Surface Mount :
yes
Vgs (Max) :
±20V
Operating Temperature :
-55°C~175°C TJ
Lead Free :
Lead Free
Power Dissipation :
54W
Factory Lead Time :
38 Weeks
Rise Time :
64ns
Power Dissipation-Max :
3.7W Ta 54W Tc
Halogen Free :
Halogen Free
Rds On (Max) @ Id, Vgs :
15m Ω @ 15A, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Turn On Delay Time :
10 ns
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
ECCN Code :
EAR99
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Turn-Off Delay Time :
18 ns
Drain Current-Max (Abs) (ID) :
39A
Current - Continuous Drain (Id) @ 25°C :
10.2A Ta
Input Capacitance (Ciss) (Max) @ Vds :
1340pF @ 25V
Number of Pins :
5
Package / Case :
8-PowerTDFN
Pbfree Code :
yes
Published :
2013
Terminal Finish :
Tin (Sn)
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 3 days ago)
Packaging :
Tape and Reel (TR)
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
10.2A
Fall Time (Typ) :
52 ns
Datasheets
NVMFS5885NLT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS5885NLT1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Pins:5, Package / Case:8-PowerTDFN, NVMFS5885NLT1G pinout, NVMFS5885NLT1G datasheet PDF, NVMFS5885NLT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS5885NLT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS5885NLT1G


N-Channel Tape & Reel (TR) 15m Ω @ 15A, 10V ±20V 1340pF @ 25V 21nC @ 10V 8-PowerTDFN

NVMFS5885NLT1G Overview


A device's maximum input capacitance is 1340pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.Its drain current is 39A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 18 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

NVMFS5885NLT1G Features


a continuous drain current (ID) of 10.2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 18 ns


NVMFS5885NLT1G Applications


There are a lot of ON Semiconductor
NVMFS5885NLT1G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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