NVMFS4C03NWFT3G

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Mfr.Part #
NVMFS4C03NWFT3G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 30V 31.4A/143A 5DFN
Stock
23,014
In Stock :
23,014

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.0024Ohm
Number of Pins :
8
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain to Source Voltage (Vdss) :
30V
Mounting Type :
Surface Mount
DS Breakdown Voltage-Min :
30V
Power Dissipation-Max :
3.71W Ta 77W Tc
Number of Terminations :
5
Terminal Position :
Dual
Factory Lead Time :
38 Weeks
Reference Standard :
AEC-Q101
Vgs (Max) :
±20V
Pulsed Drain Current-Max (IDM) :
900A
Input Capacitance (Ciss) (Max) @ Vds :
3071pF @ 15V
Package / Case :
8-PowerTDFN
Continuous Drain Current (ID) :
143A
JESD-609 Code :
e3
JESD-30 Code :
R-PDSO-F5
Case Connection :
DRAIN
Operating Temperature :
-55°C~175°C TJ
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 3 days ago)
Pbfree Code :
yes
Avalanche Energy Rating (Eas) :
549 mJ
Published :
2014
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
Flat
Gate Charge (Qg) (Max) @ Vgs :
45.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
31.4A Ta 143A Tc
Terminal Finish :
Tin (Sn)
Lead Free :
Lead Free
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
2.2V @ 250µA
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Reach Compliance Code :
not_compliant
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
2.1m Ω @ 30A, 10V
Transistor Element Material :
SILICON
Datasheets
NVMFS4C03NWFT3G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS4C03NWFT3G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Mounting Type:Surface Mount, Number of Terminations:5, Package / Case:8-PowerTDFN, Operating Temperature:-55°C~175°C TJ, NVMFS4C03NWFT3G pinout, NVMFS4C03NWFT3G datasheet PDF, NVMFS4C03NWFT3G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS4C03NWFT3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS4C03NWFT3G


N-Channel Tape & Reel (TR) 2.1m Ω @ 30A, 10V ±20V 3071pF @ 15V 45.2nC @ 10V 30V 8-PowerTDFN

NVMFS4C03NWFT3G Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 549 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3071pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 143A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 900A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

NVMFS4C03NWFT3G Features


the avalanche energy rating (Eas) is 549 mJ
a continuous drain current (ID) of 143A
based on its rated peak drain current 900A.
a 30V drain to source voltage (Vdss)


NVMFS4C03NWFT3G Applications


There are a lot of ON Semiconductor
NVMFS4C03NWFT3G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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