NVMFD5852NLWFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2014

Terminal Form :

Flat

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

15A

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Dual

Pin Count :

8

Drain to Source Voltage (Vdss) :

40V

Number of Channels :

2

FET Type :

2 N-Channel (Dual)

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Factory Lead Time :

13 Weeks

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

15A

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Rds On (Max) @ Id, Vgs :

6.9m Ω @ 20A, 10V

JESD-30 Code :

R-PDSO-F6

Reference Standard :

AEC-Q101

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Continuous Drain Current (ID) :

44A

Case Connection :

DRAIN

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 4 days ago)

Number of Elements :

2

JESD-609 Code :

e3

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Rise Time :

8ns

DS Breakdown Voltage-Min :

40V

Turn-Off Delay Time :

27 ns

Pbfree Code :

yes

Turn On Delay Time :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Fall Time (Typ) :

5 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-PowerTDFN

Operating Temperature :

-55°C~175°C TJ

Halogen Free :

Halogen Free

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Max Power Dissipation :

3.2W