NTP18N06G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

45A

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Number of Pins :

3

Turn-Off Delay Time :

14 ns

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

61 mJ

RoHS Status :

RoHS Compliant

Current Rating :

15A

Power Dissipation :

48.4W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Dual Supply Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

JESD-609 Code :

e3

Voltage - Rated DC :

60V

Turn On Delay Time :

10 ns

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Mounting Type :

Through Hole

Number of Terminations :

3

Rise Time :

25ns

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

JEDEC-95 Code :

TO-220AB

Termination :

Through Hole

Drain-source On Resistance-Max :

0.09Ohm

FET Type :

N-Channel

Pin Count :

3

Pbfree Code :

yes

Published :

2005

Fall Time (Typ) :

13 ns

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

90m Ω @ 7.5A, 10V

Package / Case :

TO-220-3

HTS Code :

8541.29.00.95

Radiation Hardening :

No

Packaging :

Tube

Nominal Vgs :

2.9 V

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

48.4W Tc

Continuous Drain Current (ID) :

15A