NTMFS5830NLT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn On Delay Time :

22 ns

Transistor Element Material :

SILICON

Published :

2012

Vgs (Max) :

±20V

Package / Case :

8-PowerTDFN, 5 Leads

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

690A

Drain-source On Resistance-Max :

0.0036Ohm

Power Dissipation :

125W

Turn-Off Delay Time :

40 ns

Fall Time (Typ) :

27 ns

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Continuous Drain Current (ID) :

28A

ECCN Code :

EAR99

Terminal Position :

Dual

Pin Count :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

28A Ta 172A Tc

Number of Pins :

5

Gate Charge (Qg) (Max) @ Vgs :

113nC @ 10V

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

40V

Element Configuration :

Single

Radiation Hardening :

No

Number of Terminations :

5

Terminal Form :

Flat

Rise Time :

32ns

Power Dissipation-Max :

3.2W Ta 125W Tc

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 20A, 10V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

5880pF @ 25V