NTMFS4939NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

26A

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

9.3A

Terminal Position :

Dual

Power Dissipation-Max :

920mW Ta 30W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

48 mJ

Terminal Form :

Flat

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

28.5nC @ 10V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Pbfree Code :

yes

Number of Terminations :

5

Element Configuration :

Single

Package / Case :

8-PowerTDFN, 5 Leads

FET Type :

N-Channel

ECCN Code :

EAR99

Turn-Off Delay Time :

21.4 ns

JESD-609 Code :

e3

Radiation Hardening :

No

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Published :

2010

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.008Ohm

Turn On Delay Time :

12.7 ns

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pin Count :

5

Power Dissipation :

2.58W

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1954pF @ 15V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Fall Time (Typ) :

4.5 ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 30A, 10V

Factory Lead Time :

16 Weeks

Number of Pins :

5

Rise Time :

26ns

Current - Continuous Drain (Id) @ 25°C :

9.3A Ta 53A Tc