NTMFS4935NT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

49.4nC @ 10V

Published :

2010

Pbfree Code :

yes

Factory Lead Time :

16 Weeks

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Turn On Delay Time :

16.3 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Number of Pins :

5

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

110 mJ

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Transistor Application :

SWITCHING

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Rise Time :

20ns

Current - Continuous Drain (Id) @ 25°C :

13A Ta 93A Tc

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Terminations :

5

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.0042Ohm

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

21.8A

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Fall Time (Typ) :

6.6 ns

Input Capacitance (Ciss) (Max) @ Vds :

4850pF @ 15V

Continuous Drain Current (ID) :

93A

Package / Case :

8-PowerTDFN, 5 Leads

Terminal Form :

Flat

Pin Count :

5

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 30A, 10V

Power Dissipation-Max :

930mW Ta 48W Tc

Radiation Hardening :

No

Turn-Off Delay Time :

27.5 ns