NTMFS4841NHT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0116Ohm

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

ECCN Code :

EAR99

Number of Terminations :

6

Avalanche Energy Rating (Eas) :

98 mJ

Published :

2009

Pulsed Drain Current-Max (IDM) :

177A

Number of Elements :

1

Continuous Drain Current (ID) :

59A

JESD-30 Code :

R-PDSO-F6

Rise Time :

20.6ns

Power Dissipation :

5.7W

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Pin Count :

8

Drain Current-Max (Abs) (ID) :

13.5A

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Package / Case :

8-PowerTDFN, 5 Leads

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 11.5V

Element Configuration :

Single

Turn-Off Delay Time :

21.9 ns

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2113pF @ 12V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

8.6A Ta 59A Tc

Fall Time (Typ) :

2.9 ns

Terminal Form :

Flat

Power Dissipation-Max :

870mW Ta 41.7W Tc

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±20V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

7m Ω @ 30A, 10V