NTMC1300R2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Form :

Gull wing

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

2.2A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

2.2A 1.8A

Reach Compliance Code :

Unknown

Pin Count :

8

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

2

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Qualification Status :

COMMERCIAL

Operating Temperature :

-65°C~150°C TJ

JESD-30 Code :

R-PDSO-G8

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Terminal Finish :

TIN LEAD

Pulsed Drain Current-Max (IDM) :

8.5A

Rds On (Max) @ Id, Vgs :

90m Ω @ 3A, 10V

Surface Mount :

yes

Terminal Position :

Dual

Power - Max :

2W

DS Breakdown Voltage-Min :

30V

JESD-609 Code :

e0

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

FET Type :

N and P-Channel

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 20V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Avalanche Energy Rating (Eas) :

75 mJ

Drain-source On Resistance-Max :

0.09Ohm