NTE2396
- Mfr.Part #
- NTE2396
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 100V 28A TO220
- Stock
- 168
- In Stock :
- 168
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- Min Operating Temperature :
- -55 °C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 69 nC @ 10 V
- ECCN Code :
- EAR99
- Drain to Source Resistance :
- 77 mΩ
- Package :
- Bag
- Max Power Dissipation :
- 150 W
- Rds On (Max) @ Id, Vgs :
- 77mOhm @ 17A, 10V
- Vgs (Max) :
- ±20V
- Package Shape :
- RECTANGULAR
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300 pF @ 25 V
- Height :
- 15.494 mm
- Current - Continuous Drain (Id) @ 25°C :
- 28A (Tc)
- Nominal Vgs :
- 2 V
- Power Dissipation :
- 150 W
- Mounting Type :
- Through Hole
- Voltage Rating (DC) :
- 100 V
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Drain-source On Resistance-Max :
- 0.077 Ω
- Drain to Source Voltage (Vdss) :
- 100 V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Supplier Device Package :
- TO-220
- Additional Feature :
- AVALANCHE RATED
- Terminal Position :
- Single
- Technology :
- MOSFET (Metal Oxide)
- Pulsed Drain Current-Max (IDM) :
- 110 A
- Surface Mount :
- No
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Terminal Form :
- THROUGH-HOLE
- Weight :
- 72.574779 g
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 100 V
- Rise Time :
- 77 ns
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Gate to Source Voltage (Vgs) :
- 20 V
- Max Operating Temperature :
- 175 °C
- Turn-Off Delay Time :
- 40 ns
- REACH SVHC :
- Unknown
- Continuous Drain Current (ID) :
- 28 A
- Number of Terminals :
- 3
- Width :
- 76.2 mm
- Manufacturer :
- NTE Electronics
- Mount :
- Through Hole
- Reach Compliance Code :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- FET Type :
- N-Channel
- Length :
- 10.668 mm
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 100 V
- Power Dissipation (Max) :
- 150W (Tc)
- Turn-On Delay Time :
- 13 ns
- Element Configuration :
- Single
- Product Status :
- Active
- Series :
- -
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- RoHS :
- Compliant
- Datasheets
- NTE2396

MOSFET (Metal Oxide) N-Channel 77mOhm @ 17A, 10V ±20V 1300 pF @ 25 V 69 nC @ 10 V 100 V TO-220-3
NTE2396 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1300 pF @ 25 V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 28 A amps.In this device, the drain-source breakdown voltage is 100 V and VGS=100 V, so the drain-source breakdown voltage is 100 V in this case.It is [40 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 110 A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 77 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20 V.The DS breakdown voltage should be maintained above 100 V to maintain normal operation.To operate this transistor, you will need a 100 V drain to source voltage (Vdss).
NTE2396 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 28 A
a drain-to-source breakdown voltage of 100 V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 110 A.
single MOSFETs transistor is 77 mΩ
a 100 V drain to source voltage (Vdss)
NTE2396 Applications
There are a lot of NTE Electronics, Inc.
NTE2396 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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