NTE2396

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Mfr.Part #
NTE2396
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CHANNEL 100V 28A TO220
Stock
168
In Stock :
168

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
Min Operating Temperature :
-55 °C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
69 nC @ 10 V
ECCN Code :
EAR99
Drain to Source Resistance :
77 mΩ
Package :
Bag
Max Power Dissipation :
150 W
Rds On (Max) @ Id, Vgs :
77mOhm @ 17A, 10V
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
Input Capacitance (Ciss) (Max) @ Vds :
1300 pF @ 25 V
Height :
15.494 mm
Current - Continuous Drain (Id) @ 25°C :
28A (Tc)
Nominal Vgs :
2 V
Power Dissipation :
150 W
Mounting Type :
Through Hole
Voltage Rating (DC) :
100 V
Operating Temperature :
-55°C ~ 175°C (TJ)
Drain-source On Resistance-Max :
0.077 Ω
Drain to Source Voltage (Vdss) :
100 V
Vgs(th) (Max) @ Id :
4V @ 250µA
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Application :
SWITCHING
Supplier Device Package :
TO-220
Additional Feature :
AVALANCHE RATED
Terminal Position :
Single
Technology :
MOSFET (Metal Oxide)
Pulsed Drain Current-Max (IDM) :
110 A
Surface Mount :
No
Number of Elements :
1
Qualification Status :
Not Qualified
Terminal Form :
THROUGH-HOLE
Weight :
72.574779 g
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
100 V
Rise Time :
77 ns
Avalanche Energy Rating (Eas) :
100 mJ
Gate to Source Voltage (Vgs) :
20 V
Max Operating Temperature :
175 °C
Turn-Off Delay Time :
40 ns
REACH SVHC :
Unknown
Continuous Drain Current (ID) :
28 A
Number of Terminals :
3
Width :
76.2 mm
Manufacturer :
NTE Electronics
Mount :
Through Hole
Reach Compliance Code :
Unknown
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-220-3
FET Type :
N-Channel
Length :
10.668 mm
Number of Pins :
3
Drain to Source Breakdown Voltage :
100 V
Power Dissipation (Max) :
150W (Tc)
Turn-On Delay Time :
13 ns
Element Configuration :
Single
Product Status :
Active
Series :
-
Polarity/Channel Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PSFM-T3
RoHS :
Compliant
Datasheets
NTE2396
Introducing Transistors - FETs, MOSFETs - Single NTE Electronics, Inc. NTE2396 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C ~ 175°C (TJ), Package / Case:TO-220-3, Number of Pins:3, NTE2396 pinout, NTE2396 datasheet PDF, NTE2396 amp .Beyond Transistors - FETs, MOSFETs - Single NTE Electronics, Inc. NTE2396 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2396


MOSFET (Metal Oxide) N-Channel 77mOhm @ 17A, 10V ±20V 1300 pF @ 25 V 69 nC @ 10 V 100 V TO-220-3

NTE2396 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1300 pF @ 25 V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 28 A amps.In this device, the drain-source breakdown voltage is 100 V and VGS=100 V, so the drain-source breakdown voltage is 100 V in this case.It is [40 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 110 A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 77 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20 V.The DS breakdown voltage should be maintained above 100 V to maintain normal operation.To operate this transistor, you will need a 100 V drain to source voltage (Vdss).

NTE2396 Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 28 A
a drain-to-source breakdown voltage of 100 V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 110 A.
single MOSFETs transistor is 77 mΩ
a 100 V drain to source voltage (Vdss)


NTE2396 Applications


There are a lot of NTE Electronics, Inc.
NTE2396 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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