NTE185MCP

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Mfr.Part #
NTE185MCP
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 80V 4A TO126
Stock
14,873
In Stock :
14,873

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Subcategory :
BIP General Purpose Small Signal
Operating Temperature :
-65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 1.5A, 2V
JEDEC-95 Code :
TO-126
Transistor Element Material :
SILICON
Current - Collector (Ic) (Max) :
4 A
ECCN Code :
EAR99
Collector-Emitter Voltage-Max :
80 V
Package :
Bag
Terminal Form :
THROUGH-HOLE
Current - Collector Cutoff (Max) :
1mA
Manufacturer :
NTE Electronics
Qualification Status :
Not Qualified
Supplier Device Package :
TO-126
Mounting Type :
Through Hole
Series :
-
DC Current Gain-Min (hFE) :
25
Power - Max :
40 W
JESD-30 Code :
R-PSFM-T3
Number of Terminals :
3
Terminal Position :
Single
Polarity/Channel Type :
NPN AND PNP
Product Status :
Active
Collector Current-Max (IC) :
4 A
Transistor Application :
SWITCHING
Surface Mount :
No
Package Shape :
RECTANGULAR
Reach Compliance Code :
Unknown
Frequency - Transition :
2MHz
Additional Feature :
MATCHED COMPLIMENTARY PAIR CONTAINS NTE184 AND NTE185
Voltage - Collector Emitter Breakdown (Max) :
80 V
Configuration :
SEPARATE, 2 ELEMENTS
Package / Case :
TO-225AA, TO-126-3
Power Dissipation Ambient-Max :
40 W
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
1.4V @ 1A, 4A
Number of Elements :
2
Datasheets
NTE185MCP
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE185MCP from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C ~ 150°C (TJ), Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, NTE185MCP pinout, NTE185MCP datasheet PDF, NTE185MCP amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE185MCP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE185MCP


PNP -65°C ~ 150°C (TJ) 1mA 2 Elements SILICON NPN AND PNP TO-225AA, TO-126-3 Through Hole

NTE185MCP Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1.5A, 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.4V @ 1A, 4A.The product comes in the supplier device package of TO-126.There is a setting of 80 V for maximal collector-Emitter voltage.A 80 V maximal voltage - Collector Emitter Breakdown is present in the device.

NTE185MCP Features


the DC current gain for this device is 20 @ 1.5A, 2V
the vce saturation(Max) is 1.4V @ 1A, 4A
the supplier device package of TO-126


NTE185MCP Applications


There are a lot of NTE Electronics, Inc
NTE185MCP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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