NTD4910N-35G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

8.2A Ta 37A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1.203pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

8.2A

Mounting Type :

Through Hole

Surface Mount :

No

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

MATTE TIN

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Power Dissipation-Max :

1.37W Ta 27.3W Tc

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

15.4nC @ 10V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

152A

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

9m Ω @ 30A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-251-3 Stub Leads, IPak

DS Breakdown Voltage-Min :

30V

Avalanche Energy Rating (Eas) :

25.3 mJ

Drain-source On Resistance-Max :

0.013Ohm

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V