NTD4863NA-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

1.95W

Number of Pins :

4

Power Dissipation-Max :

1.27W Ta 36.6W Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 30A, 10V

Current - Continuous Drain (Id) @ 25°C :

9.2A Ta 49A Tc

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

9.2A

Drain to Source Breakdown Voltage :

25V

Lead Free :

Lead Free

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Pbfree Code :

yes

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

98A

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 weeks ago)

Turn-Off Delay Time :

20.2 ns

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 12V

Number of Terminations :

3

FET Type :

N-Channel

Rise Time :

16.5ns

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 4.5V

Pin Count :

4

JESD-609 Code :

e3

Published :

2007

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Mounting Type :

Through Hole

Fall Time (Typ) :

16.5 ns

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

60.5 mJ

Surface Mount :

No

Continuous Drain Current (ID) :

8.6A