NTD4857NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

144.5 mJ

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

156A

Drain Current-Max (Abs) (ID) :

12A

Terminal Finish :

Tin

Current - Continuous Drain (Id) @ 25°C :

12A Ta 78A Tc

Case Connection :

DRAIN

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.008Ohm

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

25V

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

25V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1.96pF @ 12V

Vgs (Max) :

±20V

Power Dissipation-Max :

1.31W Ta 56.6W Tc

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Element Material :

SILICON