NTB18N06T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Voltage - Rated DC :

60V

Rds On (Max) @ Id, Vgs :

90m Ω @ 7.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Power Dissipation :

48.4W

Number of Elements :

1

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

15A

Avalanche Energy Rating (Eas) :

61 mJ

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

45A

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

60V

Vgs (Max) :

±20V

Rise Time :

25ns

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Number of Terminations :

2

Terminal Form :

Gull wing

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

14 ns

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.09Ohm

Qualification Status :

Not Qualified

Fall Time (Typ) :

13 ns

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

JESD-609 Code :

e3

Current Rating :

15A

Power Dissipation-Max :

48.4W Tc

Published :

2005

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40