NSVMMBT5088LT3G
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- Mfr.Part #
- NSVMMBT5088LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.05A SOT23-3
- Stock
- 6,429
- In Stock ：
- 6,429
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 225mW
- Collector Emitter Voltage (VCEO) :
- 500mV
- Collector Base Voltage (VCBO) :
- 35V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Published :
- 2009
- Transistor Type :
- NPN
- Max Power Dissipation :
- 225mW
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 5 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Reference Standard :
- AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 50mA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transition Frequency :
- 50MHz
- Frequency - Transition :
- 50MHz
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100μA 5V
- Terminal Form :
- Gull wing
- Datasheets
- NSVMMBT5088LT3G
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSVMMBT5088LT3G Overview
This device has a DC current gain of 300 @ 100μA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 50MHz.A maximum collector current of 50mA volts is possible.
NSVMMBT5088LT3G Features
the DC current gain for this device is 300 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
a transition frequency of 50MHz
NSVMMBT5088LT3G Applications
There are a lot of ON Semiconductor
NSVMMBT5088LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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