NSVDTC123EM3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

260mW

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN RESISTOR

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

Mounting Type :

Surface Mount

Terminal Form :

Flat

Collector Emitter Voltage (VCEO) :

250mV

Current - Collector Cutoff (Max) :

500nA

Factory Lead Time :

8 Weeks

Number of Elements :

1

Max Power Dissipation :

260mW

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Type :

NPN - Pre-Biased

Mount :

Surface Mount

Published :

2009

Packaging :

Tape and Reel (TR)

Reference Standard :

AEC-Q101

Terminal Position :

Dual

Package / Case :

SOT-723

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PDSO-F3

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Resistor - Base (R1) :

2.2 k Ω

Resistor - Emitter Base (R2) :

2.2 k Ω

Max Collector Current :

100mA