NSM21356DW6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Packaging :

Tape and Reel (TR)

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Pin Count :

6

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Mounting Type :

Surface Mount

Terminal Finish :

Tin

Pbfree Code :

yes

Qualification Status :

COMMERCIAL

Package / Case :

6-TSSOP, SC-88, SOT-363

Surface Mount :

yes

JESD-609 Code :

e3

Resistor - Emitter Base (R2) :

47k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

50V 65V

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA / 650mV @ 5mA, 100mA

Current - Collector (Ic) (Max) :

100mA

Resistor - Base (R1) :

47k Ω

Polarity/Channel Type :

NPN AND PNP

Power - Max :

230mW

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

2

Current - Collector Cutoff (Max) :

500nA

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V / 220 @ 2mA 5V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

JESD-30 Code :

R-PDSO-G6