NJVMJD6039T4G

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Mfr.Part #
NJVMJD6039T4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN DARL 80V 4A DPAK
Stock
33,277
In Stock :
33,277

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
Number of Pins :
3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Max Power Dissipation :
1.75W
Power - Max :
1.75W
Operating Temperature :
-65°C~150°C TJ
Factory Lead Time :
2 Weeks
Reach Compliance Code :
not_compliant
Published :
2010
Lead Free :
Lead Free
JESD-609 Code :
e3
Packaging :
Tape and Reel (TR)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Type :
NPN - Darlington
Polarity :
NPN
Halogen Free :
Halogen Free
Collector Emitter Voltage (VCEO) :
2.5V
Current - Collector Cutoff (Max) :
10μA
DC Current Gain (hFE) (Min) @ Ic, Vce :
500 @ 2A 4V
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 8mA, 2A
Pbfree Code :
yes
Max Collector Current :
4A
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
Surface Mount :
yes
Collector Emitter Breakdown Voltage :
80V
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Datasheets
NJVMJD6039T4G
Introducing Transistors - Bipolar (BJT) - Single onsemi NJVMJD6039T4G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-65°C~150°C TJ, Mounting Type:Surface Mount, NJVMJD6039T4G pinout, NJVMJD6039T4G datasheet PDF, NJVMJD6039T4G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJVMJD6039T4G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJVMJD6039T4G


NPN - Darlington -65°C~150°C TJ 10μA TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

NJVMJD6039T4G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 500 @ 2A 4V.When VCE saturation is 2.5V @ 8mA, 2A, transistor means Ic has reached transistors maximum value (saturated).A maximum collector current of 4A volts can be achieved.

NJVMJD6039T4G Features


the DC current gain for this device is 500 @ 2A 4V
the vce saturation(Max) is 2.5V @ 8mA, 2A


NJVMJD6039T4G Applications


There are a lot of ON Semiconductor
NJVMJD6039T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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