NE68119-T1

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - Bipolar (BJT) - RF

Additional Feature :

LOW NOISE

Transistor Type :

NPN

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Collector-Base Capacitance-Max :

0.9pF

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Current - Collector (Ic) (Max) :

65mA

Terminal Form :

Gull wing

Base Part Number :

NE68119

Package / Case :

SOT-523

Voltage - Collector Emitter Breakdown (Max) :

10V

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Number of Terminations :

3

Power Dissipation :

100mW

Terminal Position :

Dual

Surface Mount :

yes

Mounting Type :

Surface Mount

Transistor Application :

AMPLIFIER

Configuration :

Single

Reach Compliance Code :

Unknown

Highest Frequency Band :

L B

HTS Code :

8541.21.00.75

Gain :

10dB ~ 14dB

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 7mA 3V

Transition Frequency :

7000MHz

JESD-30 Code :

R-PDSO-G3

Noise Figure (dB Typ @ f) :

1.4dB ~ 1.8dB @ 1GHz ~ 2GHz

Qualification Status :

Not Qualified

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

7GHz