MTD6N20ET4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

200V

Rds On (Max) @ Id, Vgs :

700m Ω @ 3A, 10V

FET Type :

N-Channel

Turn-Off Delay Time :

22 ns

Power Dissipation :

50W

RoHS Status :

RoHS Compliant

Number of Terminations :

2

Rise Time :

29ns

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

54 mJ

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~150°C TJ

Length :

6.73mm

Pbfree Code :

yes

Turn On Delay Time :

8.8 ns

Drain to Source Breakdown Voltage :

200V

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Termination :

SMD/SMT

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Height :

2.38mm

Drain Current-Max (Abs) (ID) :

6A

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Pin Count :

3

Terminal Form :

Gull wing

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Element Configuration :

Single

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Power Dissipation-Max :

1.75W Ta 50W Tc

Mounting Type :

Surface Mount

Fall Time (Typ) :

20 ns

Resistance :

460mOhm

Width :

6.8mm

Vgs (Max) :

±20V

Threshold Voltage :

3V

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Number of Pins :

3

JESD-609 Code :

e3

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

6A

Nominal Vgs :

3 V

Dual Supply Voltage :

200V

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON