MT58L256L18F1T-8.5TR

Memory Micron Technology MT58L256L18F1T-8.5TR Overview

This Memory Micron Technology MT58L256L18F1T-8.5TR is a synchronous dual 4Mbit SRAM, offering a significant enhancement in data access speed and efficiency. Designed by Micron Technology, a leading name in semiconductor technology, this component delivers reliable performance for a wide range of applications in the electronics industry.

MT58L256L18F1T-8.5TR Features

• High-Speed Operation: With synchronous access, this SRAM operates at a rapid pace, ensuring efficient data retrieval and processing.
• Dual 4Mbit Configuration: The dual 4Mbit structure provides ample storage capacity, suitable for various memory-intensive tasks.
• 256K x 18 Organization: The memory is organized into 256K words of 18 bits each, enabling precise data handling and manipulation.
• SRAM Technology: Utilizing static random-access memory technology, this component offers fast and reliable data storage without the need for constant refreshing.
• Low Power Consumption: Despite its high-performance capabilities, this SRAM is designed for energy efficiency, making it suitable for battery-powered devices.

MT58L256L18F1T-8.5TR Applications

• Networking Equipment: This SRAM is ideal for use in networking devices such as routers, switches, and network interface cards, where high-speed data processing is crucial for seamless connectivity.
• Telecommunications Systems: In telecommunications infrastructure, including base stations, access points, and optical networking equipment, this SRAM ensures rapid data buffering and transmission for reliable communication.
• Industrial Control Systems: For industrial automation and control applications, such as PLCs (Programmable Logic Controllers) and SCADA (Supervisory Control and Data Acquisition) systems, this SRAM provides fast and dependable memory access for real-time monitoring and control.